Ion beam etching plant
Ion beam etching plant (UILT) is are applied for high vacuum technologies such as microstructures etching, cleaning, grinding and polishing of metals and optical surfaces. Thanks to low-energy ion beam, the problem of radiation damade of semiconductive materials is eliminated.
Ion beam treatment of steel surface leads to increase in its microhardness and wear-resistance in several times.
| Work chamber dimension, mm x mm | ø600x500 |
| Work chamber ultimate vacuum before etching, mm Hg | 5 * 10-5 |
| Processed substrates diameter, mm | 100,150 |
| Ion beam diameter, mm | 200 |
| Accelerating voltage regulation range, kV | 1…3 |
| Ion source maximum operating current, mA | 300 |
| Working gas | argon, oxygen |
| No of working gas supply ducts | 4 |
| Power consumption, kW | 5 |
| Occupied square, m2 | 6 |
Ion beam etching unit scheme
The ion beam equipment includes ion source and power supply, gas-filling system , work vacuum chamber with substrate holder, vacuum system, temperature test unit and visual test system.
The equipment creates in vacuum gas ion beams with output diameter up to 200 mm according to the type of used technological sources (see « Ion sources »).
The power supply ensures regulation of ion beam current and ion energy. The gas-filling system ensures selective etching of different substances due to simultaneous felling the mixture up to four various gases.
Customer demands determine the construction of work chamber and substrate holder. The Substrate holder is equipped by integral cooling system and monitoring of temperature test unit.
The vacuum system is based on standard vacuum plant, equipped by turbo-molecular, cryogenic or diffusion pumps and means of vacuum measuring. Elements of vacuum system are under control of microcontroller.
The automated control system is hierarchical and its top part is computer.
Vacuum deposition (“UVN”) plant
Vacuum deposition plant is designed for high vacuum technology processes for cleaning and thin film coatings. UVN provides in one vacuum cycle ion clearing, refractory metal deposition by magnetron sprayer and metal deposition by resistive sprayer with thickness control.
The plant coats conductive layer with good adhesion and sublayer on semiconductive materials including cadmium mercury telluride without thermal and radiation damages.
| Work chamber dimension, mm x mm | ø600x500 |
| Work chamber ultimate vacuum before etching, mm Hg | 5 * 10-5 |
| Processed substrates diameter, mm | ≤150 |
| Ion beam diameter, mm | 200 |
| Accelerating voltage regulation range, kV | 1-3 |
| Ion source maximum operating current, mA | 250 |
| Working gas | argon, oxygen |
| No of working gas supply ducts | 2 |
| Power consumption, kW | 7 |
| Occupied square, m2 | 6 |
Vacuum deposition unit scheme
The plant includes ion source, magnetron and resistive evaporator with power supplies, work chamber with substrates holder, vacuum system, gas-filling system, temperature control system and thickness film test system.
The basic technological parameters of the equipment are defined by type of used technological sources (see « Ion sources », « Magnetrons »).
The design of work chamber and substrate holder determines by requirements of customer. The substrate holder is supplied with cooling system and temperature control system.
The vacuum system is based on standard vacuum plant, equipped by turbo-molecular, cryogenic or diffusion pumps and means of vacuum measuring. Elements of vacuum system are under control of microcontroller.
The automated control system is hierarchical and its top part is computer.