ION-102 Ion source with cold cathode
The ion source is intended for:
- "dry" etching semiconductors with a micron and submicronic resolution;
- ion clearing substructures surfaces during coating;
- coating thin-film coverages by ion beam spraying of any materials;
| Accelerating voltage, kV |
1,0-4,0 |
| Current density , mÀ/cm2 |
0,2-1,1 |
| Beam diameter, mm |
102 |
| Ion source - target distance, mm |
50–200 |
| Working pressure, Pa |
6 * 10-3 – 10-2 |
ION-200 Ion source with cold cathode for forming a great beam
The ion source is intended for:
- "dry" etching semiconductors with a micron and submicronic resolution;
- ion clearing substructures surfaces during coating;
- coating thin-film coverages by ion beam spraying of any materials;
| Accelerating voltage, kV |
0,5-4,0 |
| Current density , mÀ/cm2 |
0,2–1,2 |
| Beam diameter, mm |
200 |
| Working pressure, Pa |
6 * 10-3 – 10-2 |
| Working gas |
argon, oxygen, nitrogen, freon |
ION P Stretched ion source
The ion source is intended for:
- "dry" etching semiconductors with a micron and submicronic resolution;
- ion clearing substructures surfaces during coating;
- coating thin-film coverages by ion beam spraying of any materials;
| Accelerating voltage, kV |
2,0 - 4,0 |
| Ion current, mÀ |
600 |
| Working pressure, Pa |
0,06 * 0,09 |
| Working area length, mm |
900 or 700 |
| Dimensions, mm |
960 (or 760)õ100õ60 |
| Mass, kg |
18 (14) |
Electron beam equipment
Ion plasmic equipment
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