Photodetectors and photodetector units based on indium antimonide for spectral response range 1-5 µm.

Imagers from monocrystal junction InSb are sensitive in a spectral range 1-5,5 µm (fig. 1.3.1). At their development there was a necessity of the solution of many problems of a materials technology, the processing equipment, a microcryogenics. Imagers for an average IR-range acquire indispensable arguments only at chilling up to temperature of liquid nitrogen (77). Successes in development of a material have allowed to develop at the first stage{phase} a production process of InSb-photoresistors, in the beginning single-element, then multiple-unit{multi-element} (rules). Photodiodes, unlike photoresistors, can work without an electric displacement and are better butt-jointed to microelectronic circuits of amplification{gain} and processing{machining} of a cue. Besides photodiodes basically have higher detectivity.

It is necessary to note{register;mark} special development of matrix photoreceiving devices on the basis of InSb which one development has been begun in 1990th years. InSb-matrixes of a format 32x32 and 128x128 with the sense circuitry of cues from members of the type-transparency matrix a method of charge injection have been produced{made;manufactured}. However for negative moulds of such type the threshold sensitivity was considerably degraded in process of magnifying of a format. This defects{limitation} are absent in hybrid matrix photoreceiving devices which one have been developed with utilization of multiplexers on the basis of complementary frameworks metal-oxide-semiconductor (ÊÌÎÏ) with application of modern{state-of-the-art} technological methods of assembly{assemblage} of such negative moulds. In 2000 two types of matrix photoreceiving devices of a format 128x128 and 384x288 with utilization of desksize{midget} cryogenic systems have been developed.

As an instance of utilization of InSb-photodetectors in a national economy it is possible to result{bring} an air optoelectronic reconnaissance system of minerals{mineral wealths}. Imagers and photoreceiving devices on the basis of InSb (a linear and matrix type) can be considered also alternatively instruments on the basis of junction cadmium-hydrargyrum-tellurium for utilization in òåïëîâèçèîííîé to the instrumentation for an average IR-range 3-5 microns.

Focal plane array (FPA) based on photodiodes of indium antimonide FUK9M

As component of infrared devices FPA don’t need optical-mechanical scanners, therefore thermal imagers on its base have small dimensions, low power consumption and noiseless operation.

FUK9M is used in high-sensitivity thermal imagers «looking» type with high resolution for medicine, geological prospecting, meteorological and ecological monitoring and agriculture.

Joule-Thomson’s micro heat exchanger cools up the FPA to working temperature - 80Ê.

Focal plane array (FPA) based on photodiodes of indium antimonide FUK11M

FUK11M is used in high-sensitivity thermal imagers and detectors «looking» type with high resolution for medicine, geological prospecting, meteorological and ecological monitoring, agriculture, etc.

Cooling up to operating temperature (80Ê) is carried out by microcryogenic system (MCS) Integral-Stirling.

Single element photodiode based on indium antimonide

* The detectors with other element quantity and PSE size can be produced on customer demand.