Фотоприемные устройства на основе Si, Ge, InGaAs, InGaAs на спектральный диапазон 0,3-1,7 мкмWide application is found with semi-conductor photo diodes (ФД) on the basis of monocrystal semi-conductor materials of silicon, Germany and гетероструктур connections А3В5. The general{common} spectral range of work of these photodetectors - 0,3-1,7 microns (fig. 1), that is from ultra-violet up to a near infra-red range. Application of material А3В5 allows to improve considerably parameters of photo diodes, in comparison with германиевыми ФД, regarding темновых currents and speed. The basic scopes of photodetectors and photoreception devices on the basis of Si, Ge, InGaAs, InGaAs, both in civil, and in military technics{technical equipment} - fiber-optical communication lines, systems of prompting, laser heads of homing, aviation bombs with prompting on a laser beam, laser range finders, systems of detection of laser radiation, civil theodolites, security devices, various systems of automatics and many other things. The general{common}, that characterizes these photodetectors - an opportunity without distortion to reproduce a light impulse, high monochromatic токовая sensitivity, small темновые currents, an opportunity of work without cooling. Designs of photodetectors and photoreception devices are intended for concrete applications. Code Gray multielement photodiodes Photoconductive units based on InGaAs |